MCR8DSNT4 ON Semiconductor, MCR8DSNT4 Datasheet - Page 3

• Manufacturer Part Number: MCR8DSNT4
• Description: SCRs 800V 8A
• Manufacturer: ON Semiconductor

Specifications of MCR8DSNT4

• Breakover Current Ibo Max: 90 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1 V
• Maximum Gate Peak Inverse Voltage: 18 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3 (DPAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

105
100
110
Symbol
V
I
V
I
V
I
95
90
85
DRM
RRM
H
DRM
RRM
TM
0
Figure 1. Average Current Derating
1.0
I
T(AV)
Parameter
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
Holding Current
a = 30°
, AVERAGE ON-STATE CURRENT (AMPS)
2.0
3.0
60°
Voltage Current Characteristic of SCR
90°
4.0
a = Conduction
120°
Angle
5.0
a
180°
http://onsemi.com
dc
6.0
3
I
Reverse Avalanche Region
RRM
Anode −
Reverse Blocking Region
at V
8.0
6.0
4.0
2.0
12
10
0
0
RRM
(off state)
a = Conduction
Figure 2. On−State Power Dissipation
Angle
1.0
I
T(AV)
on state
a
a = 30°
, AVERAGE ON-STATE CURRENT (AMPS)
+ Current
2.0
60°
Forward Blocking Region
I
H
3.0
V
TM
(off state)
90°
I
DRM
4.0
120°
Anode +
at V
DRM
5.0
+ Voltage
180°
dc
6.0