MCR8DSNT4 ON Semiconductor, MCR8DSNT4 Datasheet - Page 4

• Manufacturer Part Number: MCR8DSNT4
• Description: SCRs 800V 8A
• Manufacturer: ON Semiconductor

Specifications of MCR8DSNT4

• Breakover Current Ibo Max: 90 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1 V
• Maximum Gate Peak Inverse Voltage: 18 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3 (DPAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
100
1.0
0.1
1.0
1.0
0.1
10
10
10
-40
-40
0
Figure 5. Typical Gate Trigger Current versus
TYPICAL @ T
-25
-25
Figure 7. Typical Holding Current versus
V
T
Figure 3. On−State Characteristics
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
-10
-10
1.0
T
T
J
J
J
, JUNCTION TEMPERATURE (°C)
Junction Temperature
, JUNCTION TEMPERATURE (°C)
Junction Temperature
5.0
= 25°C
5.0
MAXIMUM @ T
20
20
2.0
GATE OPEN
35
35
J
50
= 25°C
50
3.0
MAXIMUM @ T
R
65
65
GK
= 1.0 KW
R
GK
80
4.0
80
= 1.0 KW
J
http://onsemi.com
= 110°C
95
95
110
110
5.0
4
0.01
1.0
0.1
1.0
0.1
1.0
0.1
10
-40
-40
0.1
Figure 6. Typical Gate Trigger Voltage versus
-25
-25
Figure 8. Typical Latching Current versus
Figure 4. Transient Thermal Response
-10
-10
1.0
T
T
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
Junction Temperature
Junction Temperature
5.0
5.0
20
20
10
t, TIME (ms)
35
35
50
50
100
Z
qJC(t)
R
65
65
GK
= R
= 1.0 KW
qJC(t)
1000
80
80
Sr(t)
95
95
10 K
110
110