MCR106-008 ON Semiconductor, MCR106-008 Datasheet - Page 3

• Manufacturer Part Number: MCR106-008
• Description: SCRs 600V 4A
• Manufacturer: ON Semiconductor

Specifications of MCR106-008

• Breakover Current Ibo Max: 25 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 2 V
• Gate Trigger Voltage (vgt): 1 V
• Maximum Gate Peak Inverse Voltage: 6 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: Through Hole
• Package / Case: TO-225-3
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

106
102
110
Symbol
V
I
V
I
V
I
98
94
90
86
82
DRM
RRM
H
DRM
RRM
TM
0
0.4
Figure 1. Maximum Case Temperature
= 30
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
I
0.8
T(AV)
, AVERAGE FORWARD CURRENT (AMP)
1.2
60
90
1.6
120
2.0
180
Voltage Current Characteristic of SCR
2.4
2.8
0
f = 60 Hz
3.2
http://onsemi.com
CURRENT DERATING
dc
3.6
4.0
3
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
110
90
70
50
30
at V
0
RRM
(off state)
Figure 2. Maximum Ambient Temperature
0.1
I
T(AV)
on state
0.2
, AVERAGE FORWARD CURRENT (AMP)
+ Current
0.3
Forward Blocking Region
= 30
I
H
0.4
V
TM
(off state)
60
0.5
I
DRM
0
90
f = 60 Hz
Anode +
at V
0.6
180
DRM
+ Voltage
0.7
dc
0.8