mcr106-6 ON Semiconductor, mcr106-6 Datasheet

mcr106-6

Manufacturer Part Number

mcr106-6

Description

Sensitive Gate Silicon Controlled Rectifiers

Manufacturer

ON Semiconductor

Datasheet

1.MCR106-6.pdf (4 pages)

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MCR106−6, MCR106−8

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

such as temperature, light and speed control; process and remote control,

and warning systems where reliability of operation is important.

Features

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. V

2. Torque rating applies with use of compression washer (B52200-F006 or

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

November, 2005 − Rev. 4

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Peak Repetitive Off−State Voltage (Note 1)

Hz, Gate Open)

On-State RMS Current, (T

(180 Conduction Angles)

Average On−State Current,

(180 Conduction Angles; T

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

Circuit Fusing Considerations, (t = 8.3 ms)

Forward Peak Gate Power,

Forward Average Gate Power,

Forward Peak Gate Current,

Peak Reverse Gate Voltage,

Operating Junction Temperature Range

Storage Temperature Range

Mounting Torque (Note 2)

High Heat Dissipation and Durability

Glass-Passivated Surface for Reliability and Uniformity

Power Rated at Economical Prices

Practical Level Triggering and Holding Characteristics

Flat, Rugged, Thermopad Construction for Low Thermal Resistance,

Pb−Free Packages are Available*

Semiconductor Components Industries, LLC, 2005

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower

case-to-sink thermal resistance. Anode lead and heatsink contact pad are

common. (See AN209B). For soldering purposes (either terminal connection

or device mounting), soldering temperatures shall not exceed +200 C. For

optimum results, an activated flux (oxide removing) is recommended.

= −40 to 110 C, Sine Wave 50 to 60

DRM

PNPN devices designed for high volume consumer applications

= 93 C, Pulse Width v 1.0 ms)

= 93 C, t = 8.3 ms)

= 93 C, Pulse Width v 1.0 ms)

and V

RRM

Rating

for all types can be applied on a continuous basis. Ratings

MCR106−6

MCR106−8

= 25 C unless otherwise noted)

= 93 C)

Preferred Device

= 93 C)

= 110 C)

Symbol

T(RMS)

T(AV)

TSM

G(AV)

DRM,

RRM

RGM

stg

−

−40 to +150

−40 to +110

Value

2.55

400

600

4.0

2.6

0.5

0.1

0.2

6.0

in. lb.

Unit

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

ORDERING INFORMATION

400 thru 600 VOLTS

CR106−x = Device Code

4 AMPERES RMS

MARKING DIAGRAM

http://onsemi.com

PIN ASSIGNMENT

= Year

= Work Week

= Pb−Free Package

SCRs

x = 6 or 8

106−xG

Publication Order Number:

YWW

TO−225AA

Cathode

CASE 77

Anode

STYLE 2

Gate

MCR106/D

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mcr106-6 Summary of contents

Page 1

... MCR106−6, MCR106−8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. Features Glass-Passivated Surface for Reliability and Uniformity ...

Page 2

... Pulse Test: Pulse Width 1.0 ms, Duty Cycle 4. R current is not included in measurement. GK ORDERING INFORMATION Device MCR106−6 MCR106−6G MCR106−8 MCR106−8G MCR106−6, MCR106− unless otherwise noted 110 C J 1%. Package TO−225AA TO−225AA (Pb−Free) TO− ...

Page 3

... I , AVERAGE FORWARD CURRENT (AMP) T(AV) Figure 1. Maximum Case Temperature MCR106−6, MCR106−8 on state RRM RRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − CURRENT DERATING 110 0.1 0.2 2 ...

Page 4

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MCR106−6, MCR106−8 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z ...

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