MRF8P26080HSR3 Freescale Semiconductor, MRF8P26080HSR3 Datasheet - Page 3

• Manufacturer Part Number: MRF8P26080HSR3
• Description: RF MOSFET Power HV8 2.6GHZ 80W NI780S-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P26080HSR3

• Transistor Polarity: N-Channel
• Configuration: Single
• Package / Case: NI-780S-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances
V
GSB
P
P
IMD Symmetry @ 12 W PEP, P
VBW Resonance Point
Gain Flatness in 50 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Measurement made with device in a Symmetrical Doherty configuration.
out
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
= 1.3 Vdc, 2570--2620 MHz Bandwidth
@ 1 dB Compression Point, CW
@ 3 dB Compression Point, CW

30 dBc
(1)
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 14 W Avg.
Symbol
VBW
IMD
∆P1dB
P1dB
P3dB
∆G
G
sym
F
res
Min
—
—
—
—
—
—
—
DD
MRF8P26080HR3 MRF8P26080HSR3
= 28 Vdc, I
0.002
0.01
Typ
0.5
54
83
40
70
DQA
= 300 mA,
Max
—
—
—
—
—
—
—
dB/°C
dB/°C
MHz
MHz
Unit
dB
W
W
3