TGF4112 TriQuint, TGF4112 Datasheet
TGF4112
Specifications of TGF4112
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TGF4112 Summary of contents
Page 1
... Nominal Pout of 6.0 Watts at 2.3 GHz • Nominal PAE of 54.5% at 2.3 GHz • Nominal Gain of 12 2.3 GHz • Die size 33.0 x 71.0 x 4.0 mils (0.8330 x 1.804 x 0.1016 mm) TGF4112-EPU RF Performance 2.3 GHz 0.75 A and T 46 Pout 44 PAE ...
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... TGF4112-EPU RF Performance for 2.3 GHz, and T Quiescent Id is 0.9 A (Vg = -1.1 V), 0.72 A (Vg = -1.3 V), and 0.61 A (Vg = -1.5 V) 140 130 120 110 100 Pout - TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8505 Web: www.triquint.com Input Power (dBm) = 25° Tch ...
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... TGF4112-EPU RF Performance for 2.3 GHz, and T Quiescent Id is 0.92 A (Vg = -1.1 V), 0.75 A (Vg = -1.3 V), and 0.65 A (Vg = -1.5 V) 140 130 120 110 100 Pout - TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8505 Web: www.triquint.com Input Power (dBm) = 25° Tch 33 32 ...
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... TGF4112-EPU RF Performance for 2.3 GHz, and T Quiescent Id is 0.92 A (Vg = -1.79 V), 0.74 A (Vg = -1.3 V), and 0.65 A (Vg = -1.5 V) 150 140 130 120 110 100 - TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8505 Web: www.triquint.com Pout Input Power(dBm) = 25° Tch 35 34 ...
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... DC Characteristics for the TGF4112-EPU DC probe Parameters IDSS Drain Saturation Current GM Transconductance VP Pinch Off Voltage BVGS Breakdown Voltage Gate-Source BVGD Breakdown Voltage Gate-Drain Example of DC I-V Curves -2. 0.25 steps Absolute Maximum Ratings Drain-to-source Voltage, Vds..............................…………………………………………..........12 V Gate-to-source Voltage, Vgs..................… ...
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... TGF4112-EPU Linear Model Vds = 8 V and Ids = 975 25°C FET Elements Lg = .00067 0.41613 Ω Rgs = 8170 Ω 0.0790 Ω Cgs = 13.5015 pF Cdg = 0.48075 pF Lg Rdg = 20400 Ω 0.08699 Ω 0.01055 nH Rds = 12.324 Ω Cds = 2.2848 0.1968 Ω 0.0067 nH VCCS Parameters M = 1.275 S ...
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... Thermal Model of TGF4112-EPU Predicted Channel Temperature vs Base Plate Temperature With a .020" CM15 (15/85 Copper Molybdenum) carrier plate solder attached using 0.0015" AuSn (80/20) solder 250 240 230 220 210 200 190 180 170 160 150 140 130 120 110 100 90 80 ...
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... Mechanical Drawing of TGF4112-EPU TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8505 Web: www.triquint.com 8 ...
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... Application circuit for the TGF4112-EPU at 2.3 GHz The FET is soldered using AuSn solder at 300°C for 30 secs. Input matching network is 0.381 mm ZrSn Tioxide substrates (Er = 38). Output matching network is 0.381mm Alumina (Er = 9.6). The design load impedance is between 6 Ω and 7 Ω with the 4 pF output capacitance of the FET included in the output network. For further explanation refer to the application note “ ...