TGF4112 TriQuint, TGF4112 Datasheet - Page 5

• Manufacturer Part Number: TGF4112
• Description: RF GaAs DC-8.0GHz 5 Watt HFET
• Manufacturer: TriQuint

Specifications of TGF4112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1004414

IDSS
GM
VP
BVGS
BVGD
Drain-to-source Voltage, Vds..............................…………………………………………..........12 V
Gate-to-source Voltage, Vgs..................………………………………………….............-5 V to 0 V
Mounting Temperature.................……………………………………….….........………………320°C
Storage Temperature.....................…………………………………….….............… -65°C to 200°C
Power Dissipation...........…………….………………………………………...refer to Thermal Model
Operating Channel Temperature…………………………………………..….refer to Thermal Model
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated in this document is not implied. Exposure to absolute maximum rated conditions for extended
periods of time may affect device reliability.
3 0 0 0
2 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] Web: www.triquint.com
5 0 0
DC Characteristics for the TGF4112-EPU
0
0
DC probe Parameters
Drain Saturation Current
Transconductance
Pinch Off Voltage
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
Vg = 0.0 V to -2.75 V in 0.25 steps T
1
2
Absolute Maximum Ratings
Example of DC I-V Curves
3
D r a in V o lt a g e ( V )
4
5
6
Nominal
A
-1.85
2940
1980
= 25°C
-22
-22
7
Unit
8
mA
mS
V
V
V
9
5