NE4210S01-T1B CEL, NE4210S01-T1B Datasheet

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NE4210S01-T1B

Manufacturer Part Number
NE4210S01-T1B
Description
RF GaAs Super Lo Noise HJFET
Manufacturer
CEL
Datasheet
1.NE4210S01.pdf (7 pages)

Specifications of NE4210S01-T1B

Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Package / Case
SO-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE4210S01-T1B
Manufacturer:
NEC
Quantity:
5 321
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE4210S01-T1B
Manufacturer:
NEC
Quantity:
385
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NE4210S01-T1B
Manufacturer:
NEC
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NE4210S01-T1B-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE4210S01-T1B/JT
Manufacturer:
HITACHI
Quantity:
10
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
NE4210S01-T1B/JT
Manufacturer:
NEC
Quantity:
1 000
FEATURES
• SUPER LOW NOISE FIGURE:
• HIGH ASSOCIATED GAIN:
• GATE LENGTH: L
• GATE WIDTH: W
ELECTRICAL CHARACTERISTICS
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
DESCRIPTION
NEC'S NE4210S01 is a pseudomorphic Hetero-Junction FET
that uses the junction between Si-doped AIGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling. Its excellent low
noise figure and high associated gain make it suitable for DBS
and commercial systems. The NE4210S01 is housed in a low
cost plastic package which is available in tape and reel.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
0.50 dB TYP at f = 12 GHz
13.0 dB TYP at f = 12 GHz
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
SYMBOLS
I
I
GSO
G
NF
DSS
g
V
m
P
A
Associated Gain
Noise Figure
Transconductance, V
Saturated Drain Current, V
Gate to Source Cutoff Voltage, V
Gate to Source Leakage Current, V
G
G
= 160 µm
≤ 0.20 µm
NEC's SUPER LOW NOISE HJ FET
PARAMETERS AND CONDITIONS
1
, V
1
DS
, V
PACKAGE OUTLINE
= 2 V, I
DS
PART NUMBER
DS
= 2 V, I
= 2 V, I
D
DS
= 10 mA, f = 12 GHz
= 2 V, V
D
D
= 10 mA, f = 12 GHz
DS
= 10 mA
GS
= 2 V, I
(T
GS
= -3 V
A
= 25°C)
= 0 V
D
= 100 µA
OUTLINE DIMENSION
UNITS
mS
mA
0.125 – 0.05
dB
dB
µA
V
2
California Eastern Laboratories
PACKAGE OUTLINE SO1
11.0
MIN
-0.2
40
15
1.9 – 0.2
1
2.0 – 0.2
0.65 TYP
4.0 – 0.2
L
1.6
0.4 MAX
3
NE4210S01
(Units in mm)
NE4210S01
S01
TYP
13.0
0.50
-0.7
0.5
55
40
1.5 MAX
4
0.5
TYP
2.0–0.2
1. Source
2. Drain
3. Source
4. Gate
MAX
0.70
-2.0
70
10

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NE4210S01-T1B Summary of contents

Page 1

... Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE4210S01 is housed in a low cost plastic package which is available in tape and reel. NEC's stringent quality assurance and test procedures assure the highest reliability and performance ...

Page 2

... (Units in mm) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 ORDERING INFORMATION PART NUMBER NE4210S01 NE4210S01-T1 NE4210S01-T1B (T = 25°C) A PART NUMBER NE4210S01 PARAMETERS UNITS MIN TYP MAX Drain to Source Voltage V Drain Current mA Input Power dBm ( Γ Γ Γ Γ Γ ...

Page 3

TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.5 1.0 1.5 2.0 2.5 0 Drain to Source Voltage, V TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 200 150 100 50 0 ...

Page 4

... Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j100 j25 S j10 22 26.5 GHz S 22 0.1 GHz 100 -j10 -j100 -j25 -j50 NE4210S01 FREQUENCY S 11 GHz MAG ANG 0.10 1.001 -1.14 0.20 1.000 -2.12 0.30 1.000 -3.08 ...

Page 5

... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 S 22 26.5 GHz S 22 0.1 GHz 100 -j10 -j25 -j50 NE4210S01 FREQUENCY S 11 GHz MAG ANG 0.10 1.000 -1.27 0.20 1.000 -2.34 0.30 1 ...

Page 6

... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 S 22 26.5 GHz S 22 0.1 GHz 100 -j10 -j25 -j50 NE4210S01 FREQUENCY S 11 GHz MAG ANG 0.10 1.001 -1.35 0.20 1.000 -2.51 0.30 1 ...

Page 7

... NE4210S01 NONLINEAR MODEL Note: This non-linear model was developed for the NE3210S01 and is generally applicable for NE4210S01 designs. SCHEMATIC GATE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.798 RG VTOSC 0 RD ALPHA 8 RS BETA 0.0952 RGMET GAMMA 0.072 KF GAMMADC 0.065 AF Q 2.5 ...

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