NE4210S01-T1B CEL, NE4210S01-T1B Datasheet - Page 2

• Manufacturer Part Number: NE4210S01-T1B
• Description: RF GaAs Super Lo Noise HJFET
• Manufacturer: CEL

Specifications of NE4210S01-T1B

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Package / Case: SO-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
TYPICAL MOUNT PAD LAYOUT
SYMBOLS
in permanent damage.
T
V
V
T
I
I
P
STG
DS
GS
CH
DS
GS
T
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
PARAMETERS
2.4 mm TYP
UNITS
mW
mA
µA
°C
°C
V
V
1
(Units in mm)
(T
-65 to +125
RATINGS
A
= 25°C)
I
-3.0
100
165
125
4.0
DSS
TYPICAL NOISE PARAMETERS
RECOMMENDED
OPERATING CONDITIONS
ORDERING INFORMATION
SYMBOLS
V
FREQ.
(GHz)
DS
10.0
12.0
14.0
16.0
18.0
PART NUMBER
NE4210S01
NE4210S01-T1
NE4210S01-T1B
V
2.0
4.0
6.0
8.0
I
P
DS
= 2 V, I
DS
IN
D
Drain to Source Voltage
Drain Current
Input Power
NF
= 10 mA
(dB)
0.29
0.30
0.33
0.38
0.43
0.50
0.59
0.71
0.86
MIN
PART NUMBER
PARAMETERS
(dB)
20.7
18.7
17.0
15.4
14.1
13.0
12.3
11.8
11.2
G
Tape & Reel 1000 pcs/reel
Tape & Reel 4000 pcs/reel
A
SUPPLY FORM
MAG
0.94
0.80
0.66
0.50
0.38
0.29
0.27
0.33
0.39
Bulk, min.
Γ Γ Γ Γ Γ
OPT
UNITS MIN TYP MAX
dBm
mA
(T
ANG
V
-129
133
177
-82
12
26
44
68
97
A
= 25°C)
(T
NE4210S01
A
Rn/50
0.38
0.33
0.26
0.18
0.11
0.09
0.08
0.11
0.23
= 25°C)
MARKING
10
2
15
3
0