BFP 450 E6327 Infineon Technologies, BFP 450 E6327 Datasheet - Page 7

• Manufacturer Part Number: BFP 450 E6327
• Description: RF Bipolar Small Signal TRANS GP BJT NPN 4.5V 0.1A
• Manufacturer: Infineon Technologies

Specifications of BFP 450 E6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 24000 MHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP450E6327XT

High Linearity Low Noise Si NPN RF Transistor
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Application Examples
Driver amplifier
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Transmitter driver amplifier
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Output stage LNA for active antennas
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Suitable for 3 - 5.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP450
Data Sheet
Highly linear low noise driver amplifier for all RF frontends
up to 2.5 GHz
Output compression point
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
Output 3rd order intermodulation point
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
Maximum available gain
Minimum noise figure
Based on Infineon´s reliable, high volume 25 GHz SIEGET™ line
Easy to use Pb-free (RoHS compliant) standard package with visible
leads
Qualified according AEC Q101
ISM bands 434 and 868 MHz
1.9 GHz cordless phones
CATV LNA
2.4 GHz WLAN and Bluetooth
TV, GPS, SDARS, 2.4 GHz WLAN, etc
Features
Package
SOT343
NF
G
min
OP
ma
= 1.7 dB at 50 mA, 3 V, 1.9 GHz
= 15.5 dB at 50 mA, 3 V, 1.9 GHz
1dB
= 18.5 dBm
1 = B
OIP
3
= 31 dBm
2 = E
7
Pin Configuration
3 = C
4
3
4 = E
Revision 1.0, 2010-10-22
Marking
ANs
1
BFP450
2