AGR09130EF TriQuint, AGR09130EF Datasheet - Page 2

• Manufacturer Part Number: AGR09130EF
• Description: RF MOSFET Power RF Transistor
• Manufacturer: TriQuint

Specifications of AGR09130EF

• Minimum Operating Temperature: - 65 C
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, + 15 V
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
Table 4. dc Characteristics
Table 5. RF Characteristics
Drain-source Breakdown Voltage (V
Gate-source Leakage Current (V
Zero Gate Voltage Drain Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Gate Quiescent Voltage (V
Drain-source On-voltage (V
Output Capacitance
Transfer Capacitance
Linear Power Gain
Output Power
Drain Efficiency
Third-order Intermodulation Distortion
Input VSWR
Ruggedness
(V
(V
(V
(V
(V
(100 kHz spacing, V
(V
VSWR = 5:1, all angles)
DS
DS
DS
DS
DS
DS
= 28 Vdc, V
= 28 Vdc, V
= 26 V, P
= 26 V, 1 dB compression, I
= 26 V, P
= 26 V, P
OUT
OUT
OUT
GS
GS
= 50 W, I
= P
= 130 W, I
DS
= 0, f = 1 MHz)
= 0, f = 1 MHz)
1dB
= 26 V, P
Functional Tests (in Agere Systems Supplied Test Fixture)
DS
DS
, I
GS
Parameter
Parameter
DQ
DQ
= 10 V, I
= 26 V, I
DS
= 10 V, I
(Test frequencies (f) = 920 MHz, 940 MHz, 960 MHz)
DQ
= 1000 mA)
= 1000 mA)
GS
= 10 V, I
= 1000 mA, f = 940 MHz,
OUT
DQ
GS
= 5 V, V
= 1000 mA)
D
DQ
= 120 WPEP, I
D
= 0, I
= 400 µA)
= 1 A)
= 1000 mA)
D
= 1 A)
DS
Dynamic Characteristics
D
(in Supplied Test Fixture)
DS
= 200 µA)
Off Characteristics
On Characteristics
= 0 V)
= 28 V, V
400
DQ
= 1000 mA)
GS
= 0 V)
V
Symbol
V
V
Symbol
V
C
VSWR
(BR)DSS
DS(ON)
GS(TH)
I
I
C
C
G
GS(Q)
P
GSS
DSS
IM3
= 30 °C.
G
OSS
—
RSS
FS
1dB
L
I
No degradation in output
power.
Min
Min
130
65
—
—
—
—
—
—
16
—
—
—
—
—
0.08
Typ
3.8
Typ
150
—
—
—
—
3.0
2:1
9
72
18
55
30
Max
200
Max
4.8
12
—
—
—
—
4
—
—
—
—
—
—
—
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
Vdc
Unit
dBc
S
pF
pF
dB
W
%
—