AGR09130EF TriQuint, AGR09130EF Datasheet - Page 4

• Manufacturer Part Number: AGR09130EF
• Description: RF MOSFET Power RF Transistor
• Manufacturer: TriQuint

Specifications of AGR09130EF

• Minimum Operating Temperature: - 65 C
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, + 15 V
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
Z
0
= 5 Ω
MHz (f)
920 (f1)
940
960 (f3)
INPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
(Complex Source Impedance)
0.55 –
0.55 –
0.58 –
f1
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
f3
Z
GATE (2)
S
Z
Z
S
Ω
1 j
0 j
0 j
S
f1
0 .
7 .
6 .
6
7
6
Z
f3
L
DUT
DRAIN (1)
SOURCE (3)
(Complex Optimum Load Impedance)
Z
L
OUTPUT MATCH
0
0
0
8 .
8 .
9 .
9
4
Z
+
L
+
+
0 j
Ω
90
1 j
1 j
9 .
0 .
3 .
6
9
5