BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 3
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BLF202 T/R
Manufacturer Part Number
BLF202 T/R
Description
RF MOSFET Power TAPE-7 TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet
1.BLF202115.pdf
(14 pages)
Specifications of BLF202 T/R
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
4 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate Quad Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
5.7 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-409-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF202,115
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 19
V
V
I
P
T
T
R
handbook, halfpage
D
stg
j
DS
GS
tot
SYMBOL
SYMBOL
th j-mb
HF/VHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
10
10
(A)
I D
10
mb
1
1
2
1
= 85 C.
(1)
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
mounting base
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
(2)
V DS (V)
DSon
.
MCD789
10
2
T
T
3
mb
mb
85 C
85 C; P
CONDITIONS
CONDITIONS
tot
= 5.7 W
MIN.
65
VALUE
20.5
Product specification
40
1
5.7
150
200
MAX.
20
BLF202
UNIT
K/W
V
V
A
W
UNIT
C
C