BLF6G38LS-100 NXP Semiconductors, BLF6G38LS-100 Datasheet - Page 8

• Manufacturer Part Number: BLF6G38LS-100
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38LS-100,112

NXP Semiconductors
9. Package outline
Fig 11. Package outline SOT502A
BLF6G38-100_6G38LS-100_1
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502A
0.186
0.135
4.72
3.43
H
A
U 2
A
A
12.83
12.57
0.505
0.495
b
0.006
0.003
0.15
0.08
c
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
All information provided in this document is subject to legal disclaimers.
JEDEC
E
U 1
D 1
D
q
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 2 — 24 October 2011
BLF6G38-100; BLF6G38LS-100
1
2
0.045
0.035
1.14
0.89
0
F
3
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
M
0.210
0.170
5.33
4.32
C
10 mm
L
M
C
0.133
0.123
3.38
3.12
p
B
L
p
F
0.067
0.057
1.70
1.45
Q
w 1
M
27.94
1.100
A
WiMAX power LDMOS transistor
q
M
B
PROJECTION
34.16
33.91
1.345
1.335
M
EUROPEAN
U 1
E 1
0.390
0.380
9.91
9.65
U 2
c
Q
0.25
0.01
w 1
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
99-12-28
03-01-10
0.51
0.02
w 2
E
SOT502A
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