BFM505 T/R NXP Semiconductors, BFM505 T/R Datasheet - Page 3

• Manufacturer Part Number: BFM505 T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFM505 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN/NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFM505,115

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System IEC 134.
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
1996 Oct 08
Any single transistor
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
Dual NPN wideband transistor
th j-s
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction
to soldering point; note 1
PARAMETER
PARAMETER
open base
open collector
up to T
open emitter
single loaded
double loaded
s
= 118 C; note 1
3
CONDITIONS
CONDITIONS





65

MIN.
VALUE
230
Product specification
115
20
8
2.5
18
500
+175
175
MAX.
BFM505
UNIT
K/W
K/W
V
V
V
mA
mW
C
C
UNIT