BFR93AR T/R NXP Semiconductors, BFR93AR T/R Datasheet - Page 7

• Manufacturer Part Number: BFR93AR T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFR93AR T/R

• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 6000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR93AR,215

NXP Semiconductors
BFR93AR_1
Product data sheet
Fig 12. Minimum noise figure as a function of collector
Fig 14. Intermodulation distortion; typical values
IMD
(dB)
(dB)
NF
40
45
50
55
60
65
4
3
2
0
1
V
current; typical values
V
f
Measured in MATV test circuit; see
p
1
0
CE
CE
f
= 8 V.
= 8 V; V
q
f
r
= 793.25 MHz; T
10
O
= 425 mV (52.6 dBmV);
10
20
amb
= 25 C.
I
C
30
Figure
(mA)
f = 2 GHz
1 GHz
500 MHz
I
C
mbb263
(mA)
mcd094
1.
Rev. 01 — 30 November 2006
10
40
2
Fig 13. Minimum noise figure as a function of
Fig 15. Second order intermodulation distortion;
(dB)
IMD2
(dB)
NF
30
35
40
45
50
55
10
4
3
2
0
1
V
frequency; typical values
V
f
Measured in MATV test circuit; see
typical values
p
0
2
CE
CE
10 mA
I
C
5 mA
f
= 8 V.
= 8 V; V
q
= 30 mA
f
r
= 810 MHz; T
10
O
= 200 mV (46 dBmV);
NPN 6 GHz wideband transistor
10
20
amb
3
= 25 C.
BFR93AR
f (MHz)
30
Figure
© NXP B.V. 2006. All rights reserved.
I
C
mbb264
mcd095
(mA)
1.
10
40
4
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