BLF6G27-10G NXP Semiconductors, BLF6G27-10G Datasheet - Page 3

• Manufacturer Part Number: BLF6G27-10G
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10G

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 3.5A
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-10G,112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G27-10_BLF6G27-10G
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh
codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz;
f
T
[1]
The BLF6G27-10 and BLF6G27-10G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
C
Symbol
P
G
RL
η
ACPR
ACPR
1
DSS
DSX
GSS
j
case
DS
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-case)
DS(on)
rs
= 2500 MHz; f
p
= 25
in
Measured within 30 kHz bandwidth.
= 28 V; I
= 25
885k
1980k
°
C per section; unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
°
C; unless otherwise specified; in a class-AB production circuit.
Thermal characteristics
Characteristics
Application information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
adjacent channel power ratio (1980 kHz) P
Parameter
thermal resistance from
junction to case
Dq
2
= 130 mA; P
All information provided in this document is subject to legal disclaimers.
= 2600 MHz; f
Rev. 3 — 28 February 2011
L
3
= P
BLF6G27-10; BLF6G27-10G
= 2700 MHz; RF performance at V
L(1dB)
Conditions
T
P
case
L
; f = 2700 MHz.
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 10 W (CW)
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
= 0.6 A
= 80 °C;
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
D
D
Conditions
P
P
P
P
= 0.18 mA
+ 3.75 V;
DS
+ 3.75 V;
= 18 mA
= 0.9 A
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
Type
BLF6G27-10
BLF6G27-10G
= 28 V
= 28 V;
= 0 V
WiMAX power LDMOS transistor
= 2 W
= 2 W
= 2 W
= 2 W
= 2 W
DS
Min
65
1.4
-
2.7
-
0.8
328
-
= 28 V; I
[1]
[1]
-
Min
17.5
-
18
-
-
Typ
-
1.9
-
-
-
-
-
3.6
© NXP B.V. 2011. All rights reserved.
Dq
Typ
4.0
4.0
Typ Max Unit
2
19
−10 -
20
−49 −46
−64 −61
= 130 mA;
Max
-
2.4
1.4
-
140
-
1256
-
-
-
-
Unit
K/W
K/W
3 of 15
W
dB
dB
%
dBc
dBc
Unit
V
V
μA
A
nA
S
mΩ
pF