BLF6G27-10G NXP Semiconductors, BLF6G27-10G Datasheet - Page 9

• Manufacturer Part Number: BLF6G27-10G
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10G

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 3.5A
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-10G,112

NXP Semiconductors
BLF6G27-10_BLF6G27-10G
Product data sheet
Table 10.
f
(GHz)
BLF6G27-10
2.50
2.55
2.60
2.65
2.70
BLF6G27-10G
2.50
2.55
2.60
2.65
2.70
Measured test circuit impedances
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 28 February 2011
BLF6G27-10; BLF6G27-10G
Z
(Ω)
5.32 − j8.61
4.85 − j8.09
4.40 − j7.55
3.98 − j7.00
3.59 − j6.43
5.67 − j13.62
5.06 − j12.79
4.55 − j11.98
4.10 − j11.19
3.71 − j10.43
i
WiMAX power LDMOS transistor
Z
(Ω)
9.46 − j6.99
9.44 − j7.41
9.32 − j7.86
9.10 − j8.31
8.77 − j8.75
10.70 − j7.38
10.61 − j8.00
10.38 − j8.63
10.00 − j9.24
9.49 − j9.79
o
© NXP B.V. 2011. All rights reserved.
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