BFG325/XR T/R NXP Semiconductors, BFG325/XR T/R Datasheet

RF Bipolar Small Signal TAPE-7 TNS-RFSS

BFG325/XR T/R

Manufacturer Part Number
BFG325/XR T/R
Description
RF Bipolar Small Signal TAPE-7 TNS-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BFG325XR215.pdf (12 pages)

Specifications of BFG325/XR T/R

Dc Collector/base Gain Hfe Min
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
14000 MHz
Collector- Emitter Voltage Vceo Max
6 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.035 A
Power Dissipation
210 mW
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-143
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFG325/XR,215
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
Table 1:
Symbol Parameter
V
V
I
P
h
C
f
G
C
T
FE
CBO
CEO
tot
CBS
max
BFG325/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
analog and digital cellular telephones
cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
radar detectors
pagers
Satellite Antenna TeleVision (SATV) tuners
repeater amplifiers in fiber-optic systems
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
Quick reference data
[2]
Conditions
open emitter
open base
T
I
T
V
emitter grounded
I
f = 1 GHz; T
I
f = 1.8 GHz; T
C
C
C
sp
j
CB
= 25 C
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 V; f = 1 MHz;
90 C
amb
CE
CE
CE
amb
= 25 C
= 3 V;
= 3 V;
= 3 V;
= 25 C
Product data sheet
[1]
Min
-
-
-
-
60
-
-
-
Typ
-
-
-
-
100
0.26
14
18.3
Max
15
6
35
210
200
0.4
-
-
Unit
V
V
mA
mW
pF
GHz
dB

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BFG325/XR T/R Summary of contents

Page 1

BFG325/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features High power gain Low noise figure High transition ...

Page 2

Philips Semiconductors Table 1: Symbol Parameter [ [2] G max 2. Pinning information Table 2: Pin Ordering information Table 3: Type number BFG325/XR 4. Marking Table 4: Type number ...

Page 3

Philips Semiconductors Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol tot T stg Thermal characteristics Table 6: Thermal characteristics Symbol Parameter R thermal resistance from junction ...

Page 4

Philips Semiconductors 250 P tot (mW) 200 150 100 100 Fig 1. Power derating curve 0.34 C CBS (pF) 0.30 0. MHz. C Fig 3. ...

Page 5

Philips Semiconductors Fig 5. Common emitter input reflection coefficient (s Fig 6. Common emitter forward transmission coefficient (s 9397 750 14247 Product data sheet 135 0.5 0.2 3 GHz 0 0.2 0.5 180 0.2 0.5 135 ...

Page 6

Philips Semiconductors Fig 7. Common emitter reverse transmission coefficient (s Fig 8. Common emitter output reflection coefficient (s 9397 750 14247 Product data sheet 135 0.5 0.4 0.3 0.2 0.1 180 135 mA. ...

Page 7

Philips Semiconductors 8. Application information Table 8: Sequence ...

Page 8

Philips Semiconductors Fig 9. Package equivalent circuit of SOT143R Table 9: Designation C_base_pad C_emitter_pad 9397 750 14247 Product data sheet C CB C_base_pad L ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE ...

Page 10

Philips Semiconductors 10. Revision history Table 10: Revision history Document ID Release date BFG325_XR_1 20050202 9397 750 14247 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 2 February 2005 BFG325/XR NPN 14 GHz ...

Page 11

Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 12

Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...

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