BFT46 T/R NXP Semiconductors, BFT46 T/R Datasheet - Page 5

• Manufacturer Part Number: BFT46 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFT46 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: 25 V
• Continuous Drain Current: 10 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFT46,215

NXP Semiconductors
December 1997
handbook, halfpage
N-channel silicon FET
Fig.6
(mS)
(mA)
0.75
0.25
|y fs |
I D
0.5
1
0
3
2
1
0
0
0
 y
T
Fig.4 Typical values. V
amb
fs
 versus I
= 25 C.
0.25
50
typ
D
. V
DS
= 10 V; f = 1 kHz;
100
0.5
DS
− V GS = 0 V
= 10 V.
I D (mA)
T j (°C)
MDA273
0.1 V
0.2 V
0.3 V
MDA269
0.75
150
5
ID = 0.5 nA
handbook, halfpage
handbook, halfpage
−V (P)GS
(V) at
Fig.5
Fig.7
(mS)
|y os |
1.25
0.75
0.25
0.5
1
5
4
3
2
1
0
0
0
Correlation between V
V
y
T
amb
DS
os
 versus I
= 10 V; T
= 25 C.
0.25
0.5
j
typ
typ
= 25 C.
D
. V
I DSS (mA) at V GS = 0
DS
= 10 V; f = 1 kHz;
0.5
(P)GS
1
Product specification
I D (mA)
and I
MDA274
MDA270
BFT46
DSS
0.75
1.5
.