BLF548 NXP Semiconductors, BLF548 Datasheet - Page 8

• Manufacturer Part Number: BLF548
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF548

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-262-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF548,112

Philips Semiconductors
List of components class-B test circuit (see Fig.11)
2003 Sep 26
C1, C2
C3
C4
C5
C6, C21, C22
C7, C10, C14, C15 multilayer ceramic chip capacitor;
C8, C11, C12, C17 multilayer ceramic chip capacitor
C9
UHF push-pull power MOS transistor
COMPONENT
f = 500 MHz.
50
input






L3
L1
L2
C3
C1
C2
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
multilayer ceramic chip capacitor;
note 2
film dielectric trimmer
note 1
multilayer ceramic chip capacitor;
note 3
V bias
V bias

C4
DESCRIPTION
R1
R5
C5
L4
L5
C10
C7
Fig.11 Test circuit for class-B operation.
R2
R6
R4
R3
C11
C8
C6
L6
L7
C9
DUT
8




22 pF
16 pF
2 to 9 pF
27 pF
2 to 18 pF
390 pF
100 nF
2
in series
VALUE
56 pF
C18
L8
L9
L10
L16
L13
C19
L14
C17
C14
C12
C15
C20
DIMENSIONS
V D
V D
R7
R8
L12
L15
C16
C13
C21
L18
L19
L11
L17
L20
L21
C22


C23
C24
2222 809 09005
2222 809 09006
2222 852 47104
Product specification
CATALOGUE NO.
MBC232
L22
L23
L24
BLF548
output
50