BLF248 NXP Semiconductors, BLF248 Datasheet - Page 3

• Manufacturer Part Number: BLF248
• Description: RF MOSFET Power RF DMOS 300W VHF P-P
• Manufacturer: NXP Semiconductors

Specifications of BLF248

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-262-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF248,112

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Per transistor section unless otherwise specified.
THERMAL CHARACTERISTICS
2003 Sep 02
handbook, halfpage
V
V
I
P
T
R
R
D
SYMBOL
SYMBOL
stg
DS
GS
tot
th j-mb
th mb-h
VHF push-pull power MOS transistor
(1) Current is this area may be limited by R
(2) T
Total device; both sections equally loaded.
(A)
10
I D
10
mb
1
2
1
= 25 C.
(1)
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
thermal resistance from junction to
mounting base
thermal resistance from mounting base to
heatsink
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
(2)
V DS (V)
DSon
.
MRA933
10
2
3
T
both sections equally loaded
total device; both sections
equally loaded.
total device; both sections
equally loaded.
mb
handbook, halfpage
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
P tot
(W)
25 C total device;
600
400
200
CONDITIONS
CONDITIONS
0
0
Fig.3 Power derating curves.
(2)
(1)
50
MIN.
65
VALUE
100
0.35
0.15
Product specification
T h ( C)
65
25
500
150
MAX.
20
BLF248
MGP203
150
UNIT
K/W
K/W
V
V
A
W
C
UNIT