J176 AMO NXP Semiconductors, J176 AMO Datasheet - Page 2
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J176 AMO
Manufacturer Part Number
J176 AMO
Description
RF JFET AMMORA FET-RFSS
Manufacturer
NXP Semiconductors
Specifications of J176 AMO
Configuration
Single
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Transistor Polarity
P-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
35 mA
Maximum Operating Temperature
+ 150 C
Package / Case
SPT
Channel Type
P
Gate-source Voltage (max)
30V
Drain Current (max)
35mA
Drain-gate Voltage (max)
30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
J176,126
NXP Semiconductors
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and
source connections.
PINNING
Note
1. Drain and source are
Marking codes:
QUICK REFERENCE DATA
April 1995
1 = drain
2 = source
3 = gate
174
175
176
177
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
Drain current
Drain-source ON-resistance
P-channel silicon field-effect transistors
up to T
V
V
interchangeable.
DS
DS
: p6X
: p6W
: p6S
: p6Y
= 0,1 V; V
= 15 V; V
amb
= 25 C
GS
GS
= 0
= 0
handbook, halfpage
Fig.1 Simplified outline and symbol, SOT23.
V
V
I
P
I
R
2
GSO
tot
DS on
G
DSS
Top view
1
DS
max.
max.
max.
max.
PMBFJ174
3
2
135
20
85
g
175
125
MAM386
PMBFJ174 to 177
70
7
300
30
30
50
Product specification
d
s
176
250
35
2
177
300
1,5
20
V
V
mA
mW
mA
mA