BLF6G38-10 /T3 NXP Semiconductors, BLF6G38-10 /T3 Datasheet - Page 2

• Manufacturer Part Number: BLF6G38-10 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-10 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.1 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-10,118

NXP Semiconductors
2. Pinning information
3. Ordering information
BLF6G38-10_BLF6G38-10G_1
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Pin
BLF6G38-10 (SOT975B)
1
2
3
BLF6G38-10G (SOT975C)
1
2
3
Type number Package
BLF6G38-10
BLF6G38-10G -
RF power amplifiers for base stations and multi carrier applications in the
3400 MHz to 3600 MHz frequency range
Connected to flange.
Pinning
Ordering information
Description
drain
gate
source
drain
gate
source
Name
-
Rev. 01 — 3 February 2009
Description
earless flanged ceramic package; 2 leads
earless flanged ceramic package; 2 leads
BLF6G38-10; BLF6G38-10G
[1]
[1]
Simplified outline
WiMAX power LDMOS transistor
1
2
1
2
Graphic symbol
© NXP B.V. 2009. All rights reserved.
Version
SOT975B
SOT975C
2
2
sym112
sym112
1
3
1
3
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