BFG590/X T/R NXP Semiconductors, BFG590/X T/R Datasheet - Page 7

• Manufacturer Part Number: BFG590/X T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG590/X T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG590/X,215

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistors
I
I
C
C
= 80 mA; V
= 80 mA; V
CE
CE
= 4 V; Z
= 4 V.
Fig.11 Common emitter forward transmission coefficient (S
o
= 50
Fig.10 Common emitter input reflection coefficient (S
180
180
o
o
50
0
135
135
135
135
40
0.2
0.2
40 MHz
o
o
o
o
0.2
30
0.5
0.5
Rev. 04 - 12 November 2007
20
3 GHz
0.5
10
90
90
90
90
1
1
1
o
o
o
o
3 GHz
40 MHz
2
2
2
5
11
45
45
45
45
); typical values.
21
o
o
o
o
5
5
MGC805
); typical values.
MGC882
BFG590; BFG590/X
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
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