BFR92AW /T3 NXP Semiconductors, BFR92AW /T3 Datasheet - Page 4

• Manufacturer Part Number: BFR92AW /T3
• Description: RF Bipolar Small Signal TAPE13 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFR92AW /T3

• Dc Current Gain Hfe Max: 65
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: UMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR92AW,135

NXP Semiconductors
CHARACTERISTICS
T
Note
1. G
I
h
C
C
C
f
G
F
SYMBOL
j
CBO
T
FE
= 25 C (unless otherwise specified).
c
e
re
NPN 5 GHz wideband transistor
UM
UM
is the maximum unilateral power gain, assuming s
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
noise figure
PARAMETER
I
I
I
I
I
I
I
f = 1 GHz; T
I
f = 2 GHz; T
I
f = 1 GHz;
I
f = 2 GHz;
E
C
E
C
C
C
C
C
C
C
= 0; V
= i
= 15 mA; V
= i
= 0; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
= 5 mA; V
Rev. 03 - 12 March 2008
e
c
= 0; V
= 0; V
CB
CE
= 10 V
= 10 V; f = 1 MHz
CONDITIONS
amb
amb
s
s
CB
EB
CE
CE
CE
CE
CE
CE
=
=
12
= 10 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 10 V;
= 10 V;
= 25 C
= 25 C
= 10 V
= 10 V; f = 500 MHz 3.5
= 10 V;
= 10 V;
opt
opt
is zero and
G
UM
=
10
65
MIN.
log
------------------------------------------------------------ dB.
1
–
90
0.6
0.9
0.35
5
14
8
2
3
TYP.
s
11
2
Product specification
s
21
BFR92AW
50
135
1
2
MAX.
–
s
22
4 of 13
2
nA
pF
pF
pF
GHz
dB
dB
dB
dB
UNIT