BLF6G38S-25 NXP Semiconductors, BLF6G38S-25 Datasheet - Page 11
BLF6G38S-25
Manufacturer Part Number
BLF6G38S-25
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G38S-25.pdf
(13 pages)
Specifications of BLF6G38S-25
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.58 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
2.1 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
4.5W(Typ)
Power Gain (typ)@vds
15@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.8GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
2.8S
Drain Source Resistance (max)
580@6.15Vmohm
Reverse Capacitance (typ)
0.59@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
24%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38S-25,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF6G38S-25
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLF6G38S-25
Manufacturer:
ANAREN
Quantity:
5 000
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Document ID
BLF6G38-25_BLF6G38S-25_2
Modifications:
BLF6G38-25_BLF6G38S-25_1
Revision history
Table 11.
Acronym
CCDF
CW
ESD
EVM
FCH
FFT
IBW
IS-95
LDMOS
N-CDMA
OFDMA
PAR
PUSC
RF
QAM
QPSK
SMD
VSWR
WCS
WiMAX
Release date Data sheet status
20081223
20080218
•
•
Abbreviations
Changed the maximum drain current and the maximum junction temperature in
Table 4 on page 2
Moved impedance information to
Description
Complementary Cumulative Distribution Function
Continuous Wave
ElectroStatic Discharge
Error Vector Magnitude
Frame Control Header
Fast Fourier Transform
Instantaneous BandWidth
Interim Standard 95
Laterally Diffused Metal-Oxide Semiconductor
Narrowband Code Division Multiple Access
Orthogonal Frequency Division Multiple Access
Peak-to-Average power Ratio
Partial Usage of SubChannels
Radio Frequency
Quadrature Amplitude Modulation
Quadrature Phase Shift Keying
Surface Mounted Device
Voltage Standing-Wave Ratio
Wireless Communications Service
Worldwide Interoperability for Microwave Access
Rev. 02 — 23 December 2008
Product data sheet
Preliminary data sheet -
BLF6G38-25; BLF6G38S-25
Section 8
Change notice Supersedes
-
WiMAX power LDMOS transistor
BLF6G38-25_BLF6G38S-25_1
-
© NXP B.V. 2008. All rights reserved.
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