BF1105WR T/R NXP Semiconductors, BF1105WR T/R Datasheet - Page 9

• Manufacturer Part Number: BF1105WR T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1105WR T/R

• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-4
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 7V
• Power Gain (typ)@vds: 38@5VdB
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1105WR,115

NXP Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
1997 Dec 02
handbook, full pagewidth
(MHz)
1000
N-channel dual-gate MOS-FETs
100
200
300
400
500
600
700
800
900
f
50
(MHz)
MAGNITUDE
800
f
(ratio)
0.994
0.991
0.982
0.968
0.956
0.937
0.918
0.897
0.878
0.858
0.840
S
11
DS
= 5 V; V
ANGLE
14.7
21.7
28.8
35.4
41.8
48.1
54.0
59.9
65.5
(deg)
3.8
7.5
G2-S
DS
R gen
50 Ω
(dB)
F
V i
= 5 V; V
MAGNITUDE
1.5
min
= 4 V; I
Fig.18 Cross-modulation test set-up.
(ratio)
3.060
3.047
3.004
2.932
2.896
2.815
2.735
2.651
2.575
2.482
2.396
50 Ω
G2-S
D
4.7 nF
S
= 12 mA
10 nF
21
= 4 V; I
V G2
ANGLE
G2
G1
10 kΩ
175.4
(deg)
170.9
162.1
153.4
145.3
137.1
129.2
121.5
106.5
114.0
99.5
D
BF1105WR
9
BF1105R
= 12 mA
(ratio)
BF1105
0.674
MAGNITUDE
D
S
(ratio)
BF1105; BF1105R; BF1105WR
0.000
0.002
0.003
0.004
0.006
0.007
0.007
0.008
0.008
0.008
0.008
V DS

opt
47 μH
4.7 nF
10 nF
S
12
(deg)
39.7
ANGLE
(deg)
MGM257
86.9
86.1
82.7
79.7
77.8
76.7
76.3
76.7
79.7
82.2
88.0
50 Ω
R1 =
MAGNITUDE
(ratio)
0.985
0.983
0.980
0.976
0.972
0.967
0.961
0.955
0.948
0.941
0.935
Product specification
37.15
S
()
R
22
n
ANGLE
12.1
16.2
20.0
23.7
27.3
30.9
34.4
37.9
(deg)
2.1
4.2
8.3