BFG540W T/R NXP Semiconductors, BFG540W T/R Datasheet - Page 4

• Manufacturer Part Number: BFG540W T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG540W T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG540W,115

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. I
3. d
4. I
2000 May 23
V
V
V
I
h
f
C
C
C
G
|s
F
P
ITO
V
d
SYMBOL
j
CBO
T
FE
2
= 25 C unless otherwise specified.
(BR)CBO
(BR)CES
(BR)EBO
L1
o
NPN 9 GHz wideband transistor
c
e
re
21
UM
a) f
a) f
a) f
|
C
C
2
im
UM
= 40 mA; V
= 40 mA; V
= 60 dB (DIN45004B); V
p
p
p
is the maximum unilateral power gain, assuming s
= 900 MHz; f
= 795.25 MHz; f
= 250 MHz; f
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power
gain; note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
CE
CE
= 8 V; R
= 8 V; V
PARAMETER
q
q
= 902 MHz; measured at f
= 560 MHz; measured at f
q
= 803.25 MHz; f
o
L
= 50 ; T
= 275 mV; R
p
= V
o
; V
amb
q
L
r
= V
= 25 C;
= 805.25 MHz; measured at f
= 75 ; T
open emitter; I
R
open collector; I
open emitter; V
I
I
T
I
I
I
I
T
I
T
I
T

f = 900 MHz

f = 900 MHz

f = 2 GHz
I
R
note 2
note 3
note 4
C
C
E
C
C
C
C
C
C
o
s
s
s
amb
amb
amb
amb
BE
L
= 40 mA; V
= 40 mA; V
= i
= i
= 0; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
6 dB; V
 
 
 
= 50 ; T
(2p  q)
(p + q)
= 0; I
e
c
= 25 C
= 25 C
= 25 C
= 25 C
opt
opt
opt
= 0; V
= 0; V
amb
; I
; I
; I
CB
= 810 MHz.
C
C
C
C
= 898 MHz and f
CONDITIONS
r
= 40 A
= 8 V; f = 1 MHz
= 25 C;
= 10 mA; V
= 40 mA; V
= 10 mA; V
CB
EB
= V
amb
4
12
CE
CE
CE
CE
CE
CE
C
CB
= 8 V; f = 1 MHz
= 0.5 V; f = 1 MHz
is zero.
o
E
= 10 A ; I
= 8 V; f = 900 MHz;
= 8 V; f = 900 MHz;
= 8 V; f = 900 MHz;
= 25 C
= 8 V
= 8 V; f = 1 GHz;
= 8 V; f = 2 GHz;
6 dB; R
= 100 A; I
= 8 V; I
CE
CE
CE
G
E
UM
L
= 8 V;
= 8 V;
= 8 V;
E
(2q  p)
= 0
(p + q  r)
BFG540W/X; BFG540W/XR
= 75 ; V
= 0
C
=
= 0
10
= 904 MHz.
= 793.25 MHz.
log
CE
20
15
2.5

100






14







-------------------------------------------------------- dB.

MIN.
1
= 8 V; I
–
s
11




120
9
0.9
2
0.5
16
10
15
1.3
1.9
2.1
21
34
500
50
s
C
2
TYP.
21
 1
= 40 mA;

2
Product specification
–
BFG540W
s



50
250







1.8
2.4





22
MAX.
2

V
V
V
nA
GHz
pF
pF
pF
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
UNIT