BLS6G2731S-120 NXP Semiconductors, BLS6G2731S-120 Datasheet - Page 6

• Manufacturer Part Number: BLS6G2731S-120
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731S-120

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 33 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 120W(Typ)
• Power Gain (typ)@vds: 13.5@32VdB
• Frequency (min): 2.7GHz
• Frequency (max): 3.1GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 135@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 48%
• Mounting: Surface Mount
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS6G2731S-120,112

NXP Semiconductors
BLS6G2731-120_6G2731S-120_1
Product data sheet
Fig 6. Load power as a function of input power;
Fig 8. Power gain and drain efficiency as function of
(dB)
(W)
G
P
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
160
L
120
p
80
40
15
13
11
0
9
2.65
typical values
frequency; typical values
0
V
P
DS
L
= 10 %.
= 120 W; V
= 32 V; I
2.75
Dq
DS
4
= 100 mA; t
2.85
= 32 V; I
(1)
(3)
(2)
G
D
p
2.95
Dq
p
= 100 mA; t
= 300 s; = 10 %.
8
3.05
BLS6G2731-120; BLS6G2731S-120
P
i
(W)
001aaj095
001aaj097
f (GHz)
p
= 300 s;
Rev. 01 — 14 November 2008
3.15
12
60
50
40
30
(%)
D
Fig 7. Load power as a function of input power;
Fig 9. Power gain and drain efficiency as function of
(dB)
(W)
G
P
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
160
120
L
p
80
40
15
13
11
0
9
2.65
typical values
frequency; typical values
0
V
P
DS
L
= 20 %.
= 120 W; V
= 32 V; I
LDMOS S-band radar power transistor
2.75
(1)
(3)
(2)
Dq
DS
4
= 100 mA; t
2.85
= 32 V; I
G
D
p
2.95
Dq
p
= 100 mA; t
= 100 s;
8
3.05
© NXP B.V. 2008. All rights reserved.
P
i
001aaj096
(W)
001aaj098
f (GHz)
p
= 20 %.
= 100 s;
3.15
12
60
50
40
30
(%)
D
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