BLS3135-20 TRAY NXP Semiconductors, BLS3135-20 TRAY Datasheet - Page 5

• Manufacturer Part Number: BLS3135-20 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-20 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 80000 mW
• Package / Case: SOT-422
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS3135-20,114

Philips Semiconductors
2000 Feb 01
handbook, halfpage
Microwave power transistor
V
Fig.6
CB
( )
z i
10
= 40 V; class-C; P
15
10
5
0
5
3
Input impedance as a function of frequency
(series components); typical values.
L
3.2
= 20 W.
3.4
f (GHz)
x i
r i
MCD867
3.6
5
handbook, halfpage
V
Fig.7
CB
( )
Z L
10
= 40 V; class-C; P
15
10
5
0
5
3
Load impedance as a function of frequency
(series components); typical values.
L
3.2
= 20 W.
3.4
BLS3135-20
Product specification
f (GHz)
X L
R L
MCD868
3.6