BLF4G20LS-110B NXP Semiconductors, BLF4G20LS-110B Datasheet - Page 4

• Manufacturer Part Number: BLF4G20LS-110B
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G20LS-110B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G20LS-110B,112

Philips Semiconductors
9397 750 14548
Product data sheet
Fig 1. One-tone CW power gain and drain efficiency
Fig 3. Intermodulation distortion as a function of
(dBc)
(dB)
IMD
G
p
15
13
11
20
40
60
80
9
0
V
f = 1990 MHz
as functions of load power; typical values
V
f = 1990 MHz
average load power; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
20
40
Dq
Dq
G
= 650 mA; T
= 650 mA; T
D
p
40
80
60
case
case
= 25 C;
= 25 C;
120
80
P
P
IMD3
IMD5
IMD7
001aac387
001aac389
L(AV)
L
(W)
(W)
Rev. 01 — 10 January 2006
160
100
60
40
20
0
(%)
D
Fig 2. Two-tone CW power gain and drain efficiency
Fig 4. Third order intermodulation distortion as a
IMD3
(dBc)
(dB)
(1) I
(2) I
(3) I
(4) I
G
p
-20
-40
-60
-80
15
14
13
12
11
10
0
V
f = 1990 MHz
as functions of average load power; typical
values
V
function of average load power; typical values
Dq
Dq
Dq
Dq
0
0
DS
DS
= 550 mA
= 650 mA
= 750 mA
= 850 mA
= 28 V; I
= 28 V; T
20
20
BLF4G20LS-110B
Dq
case
= 650 mA; T
G
1
2
3
4
D
p
= 25 C; f = 1990 MHz
40
40
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
60
60
case
= 25 C;
80
80
P
P
001aac388
001aac390
L(AV)
L(AV)
(W)
(W)
100
100
50
40
30
20
10
0
(%)
D
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