BLS2731-110 TRAY NXP Semiconductors, BLS2731-110 TRAY Datasheet - Page 11
BLS2731-110 TRAY
Manufacturer Part Number
BLS2731-110 TRAY
Description
RF Bipolar Power BULKTR TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet
1.BLS2731-110114.pdf
(12 pages)
Specifications of BLS2731-110 TRAY
Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
500000 mW
Package / Case
SOT-423
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLS2731-110,114
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
NOTES
2001 Dec 05
11
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