BF1206 NXP Semiconductors, BF1206 Datasheet - Page 16

• Manufacturer Part Number: BF1206
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1206

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1206,115

NXP Semiconductors
2003 Nov 17
handbook, halfpage
handbook, halfpage
reduction
Dual N-channel dual-gate MOS-FET
gain
V
R
(1) V
(2) V
(3) V
Fig.27 Gate 1 current as a function of gate 2
V
see Fig.35.
Fig.29 Typical gain reduction as a function of AGC
(dB)
DS
DS
G1
(μA)
I G1
−10
−20
−30
−40
−50
5 V; T
= 150 k (connected to V
= 5 V; V
30
20
10
GG
GG
GG
0
0
0
0
= 5 V.
= 4.5 V.
= 4 V.
voltage; typical values; amplifier b.
voltage; typical values; amplifier b.
j
= 25 C.
GG
= 5 V; R
1
G1
2
= 150 k; f = 50 MHz; T
GG
(4) V
(5) V
); see Fig.35.
2
GG
GG
= 3.5 V.
= 3 V.
4
V G2-S (V)
3
V AGC (V)
amb
(1)
(2)
(3)
(4)
(5)
MLE281
MLE280
= 25 C;
4
6
16
handbook, halfpage
handbook, halfpage
V
T
Fig.28 Unwanted voltage for 1% cross-modulation
V
see Fig.35.
Fig.30 Drain current as a function of gain
amb
(dBμV)
DS
V unw
DS
(mA)
= 5 V; V
I D
120
110
100
= 25 C; see Fig.35.
= 5 V; V
90
80
16
12
8
4
0
0
0
as a function of gain reduction; typical values;
amplifier b.
reduction; typical values; amplifier b.
GG
GG
= 5 V; R
= 5 V; R
10
10
G1
G1
= 150 k; f = 50 MHz; f
= 150 k; f = 50 MHz; T
20
20
30
30
gain reduction (dB)
gain reduction (dB)
Product specification
40
40
unw
amb
BF1206
MLE282
= 60 MHz;
MLE283
= 25 C;
50
50