PMBD7000,215 NXP Semiconductors, PMBD7000,215 Datasheet - Page 5
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PMBD7000,215
Manufacturer Part Number
PMBD7000,215
Description
DIODE SW DBL 100V 215MA HS SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBD7000215.pdf
(12 pages)
Specifications of PMBD7000,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
500nA @ 100V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Configuration
Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Rectifier Type
Switching Diode
Peak Rep Rev Volt
100V
Avg. Forward Curr (max)
0.215A
Rev Curr
0.5uA
Peak Non-repetitive Surge Current (max)
4A
Forward Voltage
1.1@0.1AV
Operating Temp Range
-65C to 150C
Package Type
TO-236AB
Rev Recov Time
4ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1736-2
933859210215
PMBD7000 T/R
933859210215
PMBD7000 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBD7000,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
PMBD7000
Product data sheet
Fig 3.
Fig 5.
I
FSM
(A)
10
10
10
−1
1
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
Non-repetitive peak forward current as a
Diode capacitance as a function of reverse voltage; typical values
j
= 25 °C; prior to surge
10
amb
= 25 °C
10
2
(pF )
C
0.8
0.6
0.4
0.2
d
10
0
3
0
All information provided in this document is subject to legal disclaimers.
t
p
(μs)
mbg704
Rev. 4 — 16 September 2010
10
4
4
8
Fig 4.
(nA)
(1) V
(2) V
(3) V
I
R
10
10
10
10
10
12
5
4
3
2
0
Reverse current as a function of junction
temperature
R
R
R
V
= 50 V; maximum values
= 30 V; typical values
= 50 V; typical values
R
mbg446
(V)
(1)
16
Double high-speed switching diode
(2)
100
(3)
PMBD7000
T
j
(°C)
© NXP B.V. 2010. All rights reserved.
mbg378
200
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