MBD54DWT1G ON Semiconductor, MBD54DWT1G Datasheet
MBD54DWT1G
Manufacturer Part Number
MBD54DWT1G
Description
DIODE SCHOTTKY DUAL 30V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MBD54DWT1G.pdf
(4 pages)
Specifications of MBD54DWT1G
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Current - Reverse Leakage @ Vr
2µA @ 25V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
30V
Reverse Recovery Time (trr)
5ns
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Dual Anti Parallel
Recovery Time
5 ns
Forward Voltage Drop
1 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MBD54DWT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBD54DWT1G
Manufacturer:
ON
Quantity:
2 037
MBD54DWT1G
Dual Schottky Barrier
Diodes
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 7
MAXIMUM RATINGS
Reverse Voltage
Forward Power Dissipation
@ T
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
These Schottky barrier diodes are designed for high speed switching
Compliant
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V @ I
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
A
= 25°C
Rating
(T
J
= 125°C unless otherwise noted)
Preferred Device
Symbol
F
T
V
P
T
I
stg
F
= 10 mAdc
R
F
J
−55 to +150
200 Max
125 Max
Value
150
1.2
30
1
mW/°C
Unit
mW
mA
°C
°C
V
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MBD54DWT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DETECTOR AND SWITCHING
(Note: Microdot may be in either location)
Device
1
Cathode 3
DUAL HOT−CARRIER
Anode 1
ORDERING INFORMATION
M
G
N/C 2
http://onsemi.com
CASE 419B
30 VOLTS
SOT−363
STYLE 6
DIODES
= Date Code
= Pb−Free Package
(Pb−Free)
SOT−363
Package
Publication Order Number:
5 N/C
4 Anode
6 Cathode
6
1
MBD54DWT1/D
Tape & Reel
Shipping
MARKING
DIAGRAM
3000 /
BL MG
G
†
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MBD54DWT1G Summary of contents
Page 1
... G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MBD54DWT1G SOT−363 3000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage ( mA) R Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 0.1 mAdc) F Forward Voltage (I = ...
Page 3
V , FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 1000 T ...
Page 4
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...