MBD54DWT1G ON Semiconductor, MBD54DWT1G Datasheet - Page 3

• Manufacturer Part Number: MBD54DWT1G
• Description: DIODE SCHOTTKY DUAL 30V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBD54DWT1G

• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Anti Parallel
• Recovery Time: 5 ns
• Forward Voltage Drop: 1 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBD54DWT1GOSTR

100
1.0
0.1
10
0.0
1 25°C
0.1
1 50°C
85°C
Figure 2. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
0.2
25°C
0.3
- 40°C
14
12
10
0
2
8
6
4
0
0.4
- 55°C
0.5
5
Figure 4. Total Capacitance
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V
R
, REVERSE VOLTAGE (VOLTS)
10
0.6
3
15
0.001
1000
0.01
100
1.0
0.1
10
0
T
20
A
= 150°C
5
25
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
10
30
15
20
T
25
T
A
T
A
A
= 125°C
= 25°C
= 85°C
30