SS10P3C-M3/87A Vishay, SS10P3C-M3/87A Datasheet - Page 3

• Manufacturer Part Number: SS10P3C-M3/87A
• Description: DIODE SCHOTTKY 10A 30V SMPC
• Manufacturer: Vishay
• Series: eSMP™r

Specifications of SS10P3C-M3/87A

• Voltage - Forward (vf) (max) @ If: 530mV @ 5A
• Current - Reverse Leakage @ Vr: 550µA @ 30V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: TO-277A (SMPC)
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 10 A
• Max Surge Current: 200 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.53 V at 5 A
• Maximum Reverse Leakage Current: 550 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
Document Number: 89035
Revision: 24-Nov-09
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
(T
A
Figure 2. Forward Power Loss Characteristics Per Diode
= 25 °C unless otherwise noted)
0.01
100
2.5
2.0
1.5
1.0
0.5
0.1
12
10
Figure 1. Maximum Forward Current Derating Curve
10
8
6
4
2
0
0
1
0
0
0
0.5
T
at the Cathode Band Terminal
T
0.1
L
25
A
measured
= 125 °C
1
Instantaneous Forward Voltage (V)
D = 0.1
Average Forward Current (A)
1.5
0.2
T
50
A
Lead Temperature (°C)
D = 0.2
= 150 °C
2
0.3
2.5
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75
Resistive or Inductive Load
D = 0.3
For technical questions within your region, please contact one of the following:
0.4
3
100
T
3.5
A
= 25 °C
0.5
D = 0.5 D = 0.8
D = t
4
125
p
/T
4.5
0.6
150
5
T
D = 1.0
0.7
t
p
5.5
175
0.8
6
Figure 4. Typical Reverse Leakage Characteristics Per Diode
10 000
Figure 6. Typical Transient Thermal Impedance Per Diode
0.001
1000
1000
0.01
100
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.1
0.01
10
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Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
T
20
A
= 150 °C
30
0.1
T
t - Pulse Duration (s)
Reverse Voltage (V)
1
SS10P3C, SS10P4C
A
40
= 125 °C
T
A
50
= 25 °C
1
60
Junction to Ambient
10
70
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
80
90
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100
100
100
3