BYV32-150-E3/45 Vishay, BYV32-150-E3/45 Datasheet

DIODE UFAST 18A 150V TO-220AB

BYV32-150-E3/45

Manufacturer Part Number
BYV32-150-E3/45
Description
DIODE UFAST 18A 150V TO-220AB
Manufacturer
Vishay

Specifications of BYV32-150-E3/45

Voltage - Forward (vf) (max) @ If
1.15V @ 20A
Current - Reverse Leakage @ Vr
10µA @ 150V
Current - Average Rectified (io) (per Diode)
18A
Voltage - Dc Reverse (vr) (max)
150V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
150 V
Forward Voltage Drop
1.15 V at 20 A
Recovery Time
25 ns
Forward Continuous Current
18 A
Max Surge Current
150 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYV32-150-E3/45
Manufacturer:
Vishay Semiconductors
Quantity:
400
Document Number: 88558
Revision: 07-Nov-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating storage and temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
BYV32 Series
PIN 1
PIN 3
TO-220AB
T
V
I
J
I
F(AV)
FSM
RRM
V
t
max.
rr
F
PIN 2
CASE
BYVB32 Series
PIN 2
PIN 1
Dual Common-Cathode Ultrafast Rectifier
1
K
TO-263AB
2
3
C
1
= 25 °C unless otherwise noted)
HEATSINK
K
2
BYVF32 Series
PIN 1
PIN 3
50 V to 200 V
ITO-220AB
150 °C
0.85 V
150 A
25 ns
18 A
C
= 125 °C
PIN 2
1
2
SYMBOL
T
3
J
V
V
I
I
V
F(AV)
, T
V
FSM
RRM
RMS
DC
AC
BYV(F,B)32-50 thru BYV(F,B)32-200
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
BYV32-50
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020C, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AB and
• Component in accordance to RoHS 2002/95/EC
peak of 245 °C (for TO-263AB package)
ITO-220AB package)
and WEEE 2002/96/EC
50
35
50
Vishay General Semiconductor
BYV32-100
100
100
70
- 65 to + 150
1500
150
18
BYV32-150
150
105
150
BYV32-200
200
140
200
www.vishay.com
UNIT
°C
V
V
V
A
A
V
1

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BYV32-150-E3/45 Summary of contents

Page 1

... Dual Common-Cathode Ultrafast Rectifier TO-220AB BYV32 Series PIN 1 PIN 2 CASE PIN 3 TO-263AB K 1 BYVB32 Series PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS I F(AV) V RRM I FSM max. J MAXIMUM RATINGS ( °C unless otherwise noted) C PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at T Peak forward surge current 8 ...

Page 2

... °C unless otherwise noted) C SYMBOL R θJC UNIT WEIGHT (g) PACKAGE CODE 1.85 1.97 1.35 1.35 1.85 (1) 1.97 (1) 1.35 (1) 1.35 BYV32-100 BYV32-150 BYV32-200 1.15 0.85 10 600 25 45 BYV BYVF BYVB 1.6 5.0 1.6 BASE QUANTITY DELIVERY MODE 45 50/tube 45 50/tube 45 50/tube 81 800/reel Tape reel ...

Page 3

... Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Document Number: 88558 Revision: 07-Nov-07 BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor 1000 100 10 1 0.1 125 150 0 Figure 4. Typical Reverse Leakage Characteristics Per Diode 60 50 ...

Page 4

... BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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