BAV74,235 NXP Semiconductors, BAV74,235 Datasheet - Page 2

• Manufacturer Part Number: BAV74,235
• Description: DIODE DUAL 50V 215MA H-S SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAV74,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 50V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V @ 0.1 A
• Maximum Reverse Leakage Current: 0.1 uA @ 50 V
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933700010235; BAV74 /T3; BAV74 /T3

NXP Semiconductors
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage: max. 50 V
• Repetitive peak reverse voltage: max. 60 V
• Repetitive peak forward current: max. 450 mA.
APPLICATIONS
• High-speed switching in thick and thin-film circuits.
DESCRIPTION
The BAV74 consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in a small SOT23 plastic SMD package.
MARKING
Note
1. * = p : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Jan 14
BAV74
SYMBOL
Per diode
V
V
I
I
I
P
T
T
F
FRM
FSM
stg
j
RRM
R
tot
High-speed double diode
* = t : Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
repetitive peak reverse
voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
PARAMETER
MARKING CODE
JA*
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
square wave; T
T
amb
t = 1 µs
t = 1 ms
t = 1 s
= 25 °C; note 1
(1)
2
j
lumns
= 25 °C prior to surge; see Fig.4
PINNING
CONDITIONS
Top view
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
2
anode (a1)
anode (a2)
cathode
3
1
DESCRIPTION
−
−
−
−
−
−
−
−
−
−65
−
MIN.
2
Product data sheet
60
50
215
125
450
4
1
0.5
250
+150
150
MAX.
BAV74
3
MAM108
V
V
mA
mA
mA
A
A
A
mW
°C
°C
UNIT
1