BAW56W,135 NXP Semiconductors, BAW56W,135 Datasheet - Page 13
![DIODE SW HI-SPEED DUAL SOT-323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BAW56W,135
Manufacturer Part Number
BAW56W,135
Description
DIODE SW HI-SPEED DUAL SOT-323
Manufacturer
NXP Semiconductors
Datasheet
1.BAW56235.pdf
(15 pages)
Specifications of BAW56W,135
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Current - Average Rectified (io) (per Diode)
150mA (DC)
Voltage - Dc Reverse (vr) (max)
90V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934026020135
NXP Semiconductors
12. Revision history
Table 10.
BAV756S_BAW56_SER_5
Product data sheet
Document ID
BAV756S_BAW56_SER_5 20071126
Modifications:
BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
Revision history
Release date
19971021
20030325
19971021
19971219
19990511
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BAW56M added
Section 1.1 “General
Table 1 “Product
Table 2 “Quick reference
Table 6 “Limiting
change of V
Table 6 “Limiting
change of V
Table 8
change of I
Table 8
for T
Table 8
I
Table 8
change of I
Table 8
for I
Table 8
150 A for T
Table 8
I
Section 8 “Test
Section 10 “Packing
Section 11
Section 13 “Legal
R
R
maximum value from 1 A to 0.5 A for T
maximum value from 50 A to 150 A for T
R
j
= 25 C
condition V
“Characteristics”: for BAV756S change of I
“Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
“Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
“Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
“Characteristics”: for BAV756S change of I
“Characteristics”: for BAV756S change of I
“Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
R
R
“Soldering”: added
RRM
R
j
condition V
condition V
= 150 C
maximum value from 75 V to 90 V
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Product specification
Product specification
Rev. 05 — 26 November 2007
information”: added
maximum value from 85 V to 90 V
R
overview”: added
values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
information”: updated
= 25 V; T
information”: added
description”: amended
R
R
data”: added
from 75 V to 80 V for T
from 75 V to 80 V for T
j
= 150 C
BAV756S; BAW56 series
Change notice
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-
-
-
-
-
j
= 25 C
j
= 150 C
j
j
R
= 25 C
= 150 C
R
R
maximum value from 2.5 A to 0.5 A
maximum value from 60 A to 30 A
maximum value from 100 A to
High-speed switching diodes
Supersedes
BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
BAV756S_1
BAW56_3
BAW56S_1
-
BAW56W_3
© NXP B.V. 2007. All rights reserved.
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