BAW56T,115 NXP Semiconductors, BAW56T,115 Datasheet - Page 12

• Manufacturer Part Number: BAW56T,115
• Description: DIODE DUAL 90V 150MA H-S SC-75
• Manufacturer: NXP Semiconductors

Specifications of BAW56T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 150mA (DC)
• Voltage - Dc Reverse (vr) (max): 90V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 90 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 4 A
• Configuration: Dual Common Anode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054726115; BAW56T T/R; BAW56T T/R

NXP Semiconductors
BAV756S_BAW56_SER_5
Product data sheet
Fig 17. Reflow soldering footprint BAW56T (SOT416/SC-75)
Fig 18. Reflow soldering footprint BAW56W (SOT323/SC-70)
Fig 19. Wave soldering footprint BAW56W (SOT323/SC-70)
3.65
2.35
2.10
0.85
Dimensions in mm
preferred transport direction during soldering
Rev. 05 — 26 November 2007
0.60
(3 )
0.55
(3 )
2.0
0.85
0.75
3
3
4.00
1.15
4.60
2.65
1.30
2.40
BAV756S; BAW56 series
2
1
(3x)
0.6
1.325
2
1
0.6
solder lands
solder resist
3
2.2
0.7
1.9
2
1
msa429
1.1
0.50
(3 ) 1.90
0.90
(2 )
msa438
High-speed switching diodes
2.70
(3x)
0.5
solder paste
occupied area
Dimensions in mm
1.5
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
solder lands
solder resist
occupied area
© NXP B.V. 2007. All rights reserved.
msa419
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