BAV23S,235 NXP Semiconductors, BAV23S,235 Datasheet - Page 8

DIODE G-P DUAL 200V 225MA SOT-23

BAV23S,235

Manufacturer Part Number
BAV23S,235
Description
DIODE G-P DUAL 200V 225MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV23S,235

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 200V
Current - Average Rectified (io) (per Diode)
225mA (DC)
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
0.225 A
Max Surge Current
9 A
Configuration
Dual Series
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933947770235
BAV23S /T3
BAV23S /T3
NXP Semiconductors
11. Soldering
BAV23_SER_7
Product data sheet
Fig 9.
Fig 10. Wave soldering footprint SOT23 (TO-236AB)
4.6
3
1.7
2.6
(3×)
0.7
(2×)
Reflow soldering footprint SOT23 (TO-236AB)
1.4
1.4
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
(2×)
1.2
(3×)
(3×)
3.3
2.9
1.9
0.5
0.6
1
2.2
2.8
4.5
(3×)
0.6
Dual high-voltage switching diodes
2
preferred transport direction during soldering
BAV23 series
Dimensions in mm
Dimensions in mm
© NXP B.V. 2010. All rights reserved.
solder lands
solder resist
solder paste
occupied area
solder lands
solder resist
occupied area
sot023_fr
sot023_fw
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