BAV199,215 NXP Semiconductors, BAV199,215 Datasheet - Page 6

• Manufacturer Part Number: BAV199,215
• Description: DIODE SW DBL 75V 160MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV199,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Current - Average Rectified (io) (per Diode): 160mA (DC)
• Voltage - Dc Reverse (vr) (max): 75V
• Reverse Recovery Time (trr): 3µs
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Standard Recovery Rectifier
• Configuration: Dual Series
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 3000 ns
• Forward Continuous Current: 0.16 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.005 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1619-2; 934032640215; BAV199 T/R

NXP Semiconductors
PACKAGE OUTLINE
2001 Oct 12
Plastic surface mounted package; 3 leads
Low-leakage double diode
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
1
6
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
Product data sheet
X
v
ISSUE DATE
BAV199
M
97-02-28
99-09-13
A
SOT23