BAW101,215 NXP Semiconductors, BAW101,215 Datasheet - Page 7

• Manufacturer Part Number: BAW101,215
• Description: DIODE DUAL 300V 250MA SOT-143B
• Manufacturer: NXP Semiconductors

Specifications of BAW101,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 260nA @ 250V
• Current - Average Rectified (io) (per Diode): 250mA (DC)
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4.5 A
• Configuration: Dual Parallel
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 0.15 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057613215; BAW101 T/R; BAW101 T/R

NXP Semiconductors
PACKAGE OUTLINE
2003 May 13
Plastic surface mounted package; 4 leads
High voltage double diode
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT143B
1.1
0.9
A
max
A 1
0.1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
1.4
1.2
E
3
2
1.9
w
e
B
scale
M
EIAJ
7
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
A
0.45
0.15
L p
A 1
0.55
0.45
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
L p
0.1
y
Product data sheet
A
BAW101
ISSUE DATE
97-02-28
c
SOT143B
X