EMP11T2R Rohm Semiconductor, EMP11T2R Datasheet - Page 2

• Manufacturer Part Number: EMP11T2R
• Description: DIODE SWITCH 80V 100MA HS EMD6
• Manufacturer: Rohm Semiconductor

Specifications of EMP11T2R

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Current - Average Rectified (io) (per Diode): 100mA
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SC-75-6, EMD6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Diodes
Electrical characteristic curves (Ta=25°C)
100
900
890
880
870
860
850
100
0.1
10
20
15
10
10
1
5
0
1
0.1
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=150℃
IFSM DISPERSION MAP
VF DISPERSION MAP
1
AVE:870.1mV
Ta=125℃
AVE:2.50A
TIME:t(ms)
Ta=75℃
Ifsm
Ifsm
10
IF=100mA
8.3ms
Ta=25℃
n=30pcs
Ta=-25℃
t
1cyc
Ta=25℃
100
10000
0.001
1000
1000
0.01
100
100
100
0.1
10
90
80
70
60
50
40
30
20
10
10
10
0
1
9
8
7
6
5
4
3
2
1
0
0.001
0
10
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
20
trr DISPERSION MAP
IR DISPERSION MAP
0.1
AVE:4.310nA
30
AVE:1.93ns
TIME:t(s)
Mounted on epoxy board
IM=1mA
40
Ta=150℃
1ms
300us
50
10
time
60
RL=50Ω
Ta=25℃
n=10pcs
Ta=25℃
n=10pcs
VR=70V
IF=5mA
VR=6V
IF=10mA
Ta=-25℃
Rth(j-c)
Rth(j-a)
Ta=125℃
Ta=75℃
Ta=25℃
70
1000
80
0.1
10
10
10
1
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
1
IFSM-CYCLE CHARACTERISTICS
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
AVE:1.47kV
C=200pF
ESD DISPERSION MAP
5
R=0Ω
Ct DISPERSION MAP
NUMBER OF CYCLES
AVE:1.831pF
Rev.D
Ifsm
10
10
8.3ms
AVE:2.98kV
C=100pF
R=1.5kΩ
EMP11
1cyc
15
f=1MHz
Ta=25℃
8.3ms
n=10pcs
f=1MHz
VR=6V
2/2
100
20