BAS21AVD,165 NXP Semiconductors, BAS21AVD,165 Datasheet - Page 2

DIODE ARRAY SW 200V SOT457R

BAS21AVD,165

Manufacturer Part Number
BAS21AVD,165
Description
DIODE ARRAY SW 200V SOT457R
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS21AVD,165

Package / Case
SC-74-6
Voltage - Dc Reverse (vr) (max)
200V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
200 mA
Max Surge Current
625 mA
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
250 mW
Operating Temperature Range
- 55 C to + 150 C
Maximum Diode Capacitance
5 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
-
Voltage - Forward (vf) (max) @ If
-
Current - Average Rectified (io) (per Diode)
-
Diode Configuration
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059099165
NXP Semiconductors
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 100 V; 150 V; 200 V
• Repetitive peak reverse voltage: max. 120 V; 200 V;
• Repetitive peak forward current: max. 625 mA.
APPLICATIONS
• General purpose switching in e.g. surface mounted
DESCRIPTION
The BAS19, BAS20 and BAS21 are general purpose
diodes fabricated in planar technology, and encapsulated
in a small SOT23 plastic SMD package.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
2003 Mar 20
BAS19
BAS20
BAS21
250 V
circuits.
General purpose diodes
∗ = t: Made in Malaysia.
∗ = W: Made in China.
TYPE NUMBER
MARKING CODE
JP∗
JR∗
JS∗
(1)
2
PINNING
handbook, halfpage
PIN
Fig.1 Simplified outline (SOT23) and symbol.
1
2
3
2
anode
not connected
cathode
BAS19; BAS20; BAS21
3
1
DESCRIPTION
n.c.
2
Product data sheet
3
MAM185
1

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