BAS21AVD,165 NXP Semiconductors, BAS21AVD,165 Datasheet - Page 6
![DIODE ARRAY SW 200V SOT457R](/photos/1/38/13824/sc-74-6_sml.jpg)
BAS21AVD,165
Manufacturer Part Number
BAS21AVD,165
Description
DIODE ARRAY SW 200V SOT457R
Manufacturer
NXP Semiconductors
Datasheet
1.BAS19235.pdf
(10 pages)
Specifications of BAS21AVD,165
Package / Case
SC-74-6
Voltage - Dc Reverse (vr) (max)
200V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
200 mA
Max Surge Current
625 mA
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
250 mW
Operating Temperature Range
- 55 C to + 150 C
Maximum Diode Capacitance
5 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
-
Voltage - Forward (vf) (max) @ If
-
Current - Average Rectified (io) (per Diode)
-
Diode Configuration
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059099165
NXP Semiconductors
2003 Mar 20
handbook, halfpage
handbook, halfpage
General purpose diodes
(1) V
(2) V
Fig.5
(1) BAS21.
(2) BAS20.
(3) BAS19.
Fig.7
(µA)
V R
(V)
10
10
300
200
100
I R
10
10
R
R
0
1
2
1
2
= V
= V
0
0
Reverse current as a function of junction
temperature.
Maximum permissible continuous reverse
voltage as a function of the ambient
temperature.
(1)
(2)
(3)
Rmax
Rmax
; maximum values.
; typical values.
(1)
100
100
(2)
T amb (
T j (
o
C)
o
C)
MBG445
MBG381
200
200
6
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.0
0.8
0.6
0.4
0.2
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
2
BAS19; BAS20; BAS21
4
6
Product data sheet
V R (V)
MBG447
8