BAS21AW,115 NXP Semiconductors, BAS21AW,115 Datasheet - Page 6

• Manufacturer Part Number: BAS21AW,115
• Description: DIODE SW 200V 200MA HS UMT3
• Manufacturer: NXP Semiconductors

Specifications of BAS21AW,115

• Package / Case: SC-70-3, SOT-323-3
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Current - Average Rectified (io) (per Diode): 125mA (DC)
• Voltage - Dc Reverse (vr) (max): 250V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 125 mA
• Max Surge Current: 625 mA
• Configuration: Dual Common Anode
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 200 mW
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063269115

NXP Semiconductors
8. Test information
BAS21W_SER_1
Product data sheet
Fig 4.
Fig 6.
(pF)
(1) I
V = V
C
1.0
0.8
0.6
0.4
0.2
d
R
S
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
Reverse recovery time test circuit and waveforms
R
R
= 50
= 1 mA
I
F
R
S
8.1 Quality information
2
amb
= 25 C
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
I
4
F
D.U.T.
6
OSCILLOSCOPE
V
mga881
R
SAMPLING
mbg447
R
(V)
i
= 50
Rev. 01 — 9 October 2009
8
V
R
Fig 5.
t
10 %
r
(mA)
I
(1) Single diode loaded.
(2) Double diode loaded.
90 %
F
300
200
100
0
input signal
0
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curve
t
p
(2)
(1)
50
BAS21W series
High-voltage switching diodes
t
100
I
F
output signal
150
© NXP B.V. 2009. All rights reserved.
T
amb
006aab214
t rr
( C)
200
(1)
t
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