BAW101S,115 NXP Semiconductors, BAW101S,115 Datasheet - Page 9

• Manufacturer Part Number: BAW101S,115
• Description: DIODE DUAL 300V 250MA SOT-363
• Manufacturer: NXP Semiconductors

Specifications of BAW101S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 150nA @ 250V
• Current - Average Rectified (io) (per Diode): 250mA (DC)
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Anti Parallel
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.1 V at 0.1 A
• Recovery Time: 50 ns
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4.5 A
• Reverse Current Ir: 50 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057353115; BAW101S T/R; BAW101S T/R

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© NXP B.V. 2009
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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]
613514/01/pp9
Date of release: 2003 May 13
Document order number: 9397 750 11148